Igiciro cyiza cyiza MWCNT Igizwe na Carbone Nanotubes
Multi ikikijwe na CNT, ifu ya MWCNT
D: 10-30nm / 30-60nm / 60-100nm
L: 1-2um / 5-20um
Ifu yumukara igaragara
Inyungu:
Birayobora cyane, ubuziranenge bwo hejuru 99%
Urwego rw'inganda
Kurenza uko utumiza, igiciro cyiza.
Hindura serivisi:
COOH ikora;OH Imikorere;Ikwirakwizwa ry'amazi;Gukwirakwiza amavuta;Nickel-Coated Carbon Nanotubes Niba ushaka igiciro gito MWCNT, nanone ifu ya MWCNT isukuye 93% -95% irahari.
Gukoresha ibikoresho bya carbone nanotubes:
Carbone nanotubes ni ubwoko bushya bwibikoresho byogutwara ibintu, bishobora kunoza uburyo bwiza bwa electrode nziza ikora neza kuruta ibintu bisanzwe.Nibikoresho byiza bya batiri ya lithium.Kugeza ubu ibikoresho bikoreshwa cyane muri bateri ya lithium-ion harimo karubone yumukara, grafitike ikora, carbone nanotubes, carbone nanofibers, na graphene.Carbone umukara na grafitike ni ibintu gakondo bitwara ibintu, bigizwe numuyoboro uhuza imiyoboro ikora;carbone nanotubes, fibre ya karubone na graphene nibikoresho bishya bitwara, aho karubone ya karubone na fibre ya karubone iri hagati yibikoresho bikora Umuyoboro uhuza umurongo uhuza, na graphene ikora umuyoboro uhuza imiyoboro hagati yibikoresho bikora.Ubwoko bwumurongo wubwoko hamwe nubuso bwubwoko bushobora kurushaho kubaka urusobekerane, rushobora kurushaho kunoza ibikorwa byibikoresho bya cathode Imikorere yibikoresho, bityo bikagabanya umubare wibikoresho byongewe kubintu byiza bya electrode.Muri rusange, ubwinshi bwibikoresho bya karubone yumukara mubikoresho bya cathode mubusanzwe bigera kuri 3%, mugihe umubare wongeyeho ibintu bishya bitwara ibintu nka karubone nanotubes na graphene bishobora kugabanuka kugera kuri 0.5% ~ 1.0%, bitezimbere kuzuza ya cathode ibikoresho bifatika.Ingano yingufu zirashobora gufasha kongera ingufu za bateri ya lithium-ion.Amashanyarazi ya plastike: gukoresha kimwe mumikorere ya karubone nanotubes, ivanze na plastiki yubuhanga birashobora kuba bikozwe muri plastiki itwara ibintu byombi kandi biranga plastike, ikoreshwa cyane muri semiconductor hamwe nibikoresho birwanya static Ibikoresho no gukingira electronique.

Umutungo | Igice | MWCNTs | Uburyo bwo gupima | ||
OD | nm | 20-30 | 20-30 | 20-30 | HRTEM, Raman |
Isuku | wt% | > 98 | > 98 | > 98 | TGA & TEM |
Uburebure | microns | 10-30 | 10-30 | 10-30 | TEM |
SSA | m2 / g | > 110 | > 110 | > 110 | BYIZA |
ASH | wt% | <1.5 | <1.5 | <1.5 | TGA |
Ig / Id | -- | -- | -- | -- | Raman |
-Ibirimo | wt% | 1.76 | XPS & Titration | ||
-Ibirimo | wt% | 1.23 | XPS & Titration | ||
OD = Diameter yo hanze ID = Imbere Imbere SSA = Ubuso bwihariye |